Simulation, Design, and Fabrication of Thin-Film Resistive-Gate GaAs Charge Coupled Devices
نویسنده
چکیده
Computer simulation of high-speed Gallium Arsenide Charge Coupled Devices is performed using an established twodimensional semiconductor device simulation program. The effect of active layer thickness on the Charge Transfer Efficiency (CTE) and the dynamic range is investigated using different active layers. Also, different gate architectures are compared for optimum dynamic range and compatibility with GaAs MESFET technology. Both Capacitive Gate CCD (CGCCD) and Resistive Gate CCD (RGCCD) are considered. Measured performance of fabricated GaAs CCDs is compared with modeled results.
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